High Performance Space Lubrication of MoS ₂ with Tantalum

High Performance MOS Tunneling Cathode with CoSi2 Gate Electrode

Zirconium Oxide Mixed Tantalum Oxide High-K Gate Dielectric Films for Metal-Oxide-Semiconductor (MOS) Devices

Hafnium oxide mixed tantalum oxide (HTO) and Zirconium oxide mixed tantalum oxide (ZTO) layers were deposited on chemically cleaned p-Si substrate using RF magnetron sputtering technique. The oxide/Si stacks were annealed in oxygen for 30 minutes at 400 °C as on initial investigation. Both composition and structural properties were absolutely interesting to move further for electrical measureme...

Modeling of accumulation MOS capacitors for high performance analog circuits

A physical-based model for MOS capacitors in accumulation is presented, which is able to predict the non-linear distortion accurately. The key idea of this work is to include the polysilicon gate depletion effect in that model. Several test structures based on MOS capacitors in accumulation have been implemented with the aim of validating the model and to explore the potential applications to h...

Device and Circuit Performance Issues with Deeply Scaled High-K MOS Transistors

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for highK dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs....

Study on of Foil Rolling With Lubrication Effects

In cold rolling of thin strips, i.e., foils (Thickness